Chemical Engineering

Chemical Vapor Deposition (Surface Engineering Series, V. 2) by Jong-Hee Park

Posted On February 25, 2017 at 3:44 pm by / Comments Off on Chemical Vapor Deposition (Surface Engineering Series, V. 2) by Jong-Hee Park

By Jong-Hee Park

This guide offers directions and functional details at the chemical vapor deposition (CVD) method for floor engineering layout, product improvement, and production. the 1st of the 14 chapters speak about the fundamental ideas of CVD thermodynamics and kinetics, stresses and mechanical sta

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As far as the intrinsic stresses are concerned, they are associated with the film growth process. If the incident atoms are not sufficiently mobile at the surface of the substrate, later atom rearrangements associated with changes in film volume may generate this type of stress. 18 Generally, these stresses decrease as the deposition temperature increases. 19 For example, the growth of grains,20 the rearrangement of atoms at grain boundaries21 or partial or total crystallization of amorphous films result in volume decreases that generate intrinsic tensile stresses.

Single or multi-step reactions at the substrate surface, Basic Principles of CVD Thermodynamics and Kinetics 33 Mullit e Si Fig. 8: 5μ Scanning electron micrograph of the cross-section of a typical mullite coating on SiC using AlCl3-SiCl4-CO2-H2 system at 950°C and 75 torr. a b c Fig. 9: (a) Cross-sectional TEM micrograph of CVD mullite coating on SiC with diffraction patterns from the two regions of the coating, (b) crystalline mullite, and (c) vitreous nano-crystalline layer. 34 Pattanaik and Sarin Bulk Gas 1 7 2 ------------------------------------------------------------------------------- δ 3 6 4 Boundary Layer 5 Coating Substrate Fig.

In a steady state conditions, Jgs = Js, so, Cs = Cg k 1+ s hg (25) 36 Pattanaik and Sarin Gas Coating δ Cg Cs Jgs Js Fig. 54 If ks >> hg, the system is mass controlled where low gas transport rate through the boundary layer limits the rapid surface reaction. Surface reaction control dominates when hg >> ks (Cs approaches Cg), the surface reaction is slow even through sufficient reactant gas is available. Additionally, h g increases with increasing pressure and decreasing temperature, and k s follows the Arrhenius equation.

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